STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 description STN1810 is the nchannel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology. this high density process is especially tailored to minimize onstate resistance and provide superior switching performance. these applications such as n otebook computer power management and other battery powered circuits where highside switching, low in line power loss and resistance to transients are me lded. pin configuration sop-8 part marking y: year code a: process code feature 60v/8.0a, r ds(on) = 140m (typ.) @v gs = 10v 60v/6.5.0a, r ds(on) = 150m @v gs = 7.0v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sop8 package design
STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 100 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 8.0 6.0 a pulsed drain current idm 12 a continuous source current (diode conduction) is 2.3 a power dissipation ta=25 ta=70 pd 2.8 1.8 w operation junction temperature tj 150 storgae temperature range tstg 55/150 thermal resistancejunction to ambient rja 80 /w
STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drainsource breakdown voltage v (br)dss v gs =0v,id=250ua 100 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =80v,v gs =0v 250 zero gate voltage drain current i dss v ds =80v,v gs =0v t j =5 5 ua onstate drain current i d(on) v ds R 5v,v gs =10v 8 a drainsource on resistance r ds(on) v gs =10v,i d =10a v gs =7.0v,i d =6.5a 140 150 155 170 m forward transconductance gfs v ds =5v,i d =6.2av 5.6 s diode forward voltage v sd i s =1a,v gs =0v 1.3 v dynamic total gate charge q g 10 16 gatesource charge q gs 2.5 gatedrain charge q gd v ds =80v,v gs =5v i d 5a 4.2 nc input capacitance c iss 430 output capacitance c oss 58 reverse transfercapacitance c rss v ds =25v,vgs=0v f=1mhz 33 pf 6.5 turnon time t d(on) tr 10 13 turnoff time t d(off) tf v dd =50v,r d =10 v ds =30v,r g =3.3 i d 5a 3.4 ns
STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 typical characterictics
STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 typical characterictics
STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 typical characterictics
STN1810 n channel enhancement mode mosfet 8.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STN1810 2009. v1 package outline sop-8p
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